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PolarHT TM
Power MOSFET
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V DSS
I D25
R DS(on)
= 300 V
= 88 A
≤ 40 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
300 V
G
D
S
D (TAB)
V DGR
T J = 25 ° C to 150 ° C; R GS = 1 M ?
300
V
V GS
V GSM
I D25
I D(RMS)
I DM
Continuous
Transient
T C = 25 ° C
External lead current limit
T C = 25 ° C, pulse width limited by T JM
± 20
± 30
88
75
220
V
V
A
A
A
TO-264 (IXTK)
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
60
60
2.0
10
A
mJ
J
V/ns
G
D
S
TO-3P (IXTQ)
D (TAB)
T J ≤ 150 ° C, R G = 4 ?
P D
T C = 25 ° C
600
W
S
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
G
D
TO-268 (IXTT)
(TAB)
M d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
TO-264
TO-3P & TO-268
6.0
10
5.5
g
g
g
G
S
D (TAB)
G = Gate
D = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
S = Source
Features
TAB = Drain
BV DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
300
2.5
5.0
± 100
V
V
nA
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
100
1
μ A
mA
Advantages
l
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
40
m ?
l
l
Space savings
High power density
? 2006 IXYS All rights reserved
DS99129E(12/05)
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